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2008 International Conference on Electrical and Computer Engineering - Direct extraction of interface trap states from the low frequency gate C-V characteristics of MOS devices with ultrathin high-К gate dielectrics by Satter, Md. M.; Haque, A. is a scholarly article available to read on EtoBox.

Author
Satter, Md. M.; Haque, A.
Publisher
IEEE
Published
2008

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