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About this Engineering article
Mechanical property effects of Si1−xGex channel and stressed contact etching stop layer on nano-scaled n-type metal–oxide–semiconductor field effect transistors by Lee, Chang-Chun; Cheng, Hsien-Chie; Hsu, Hung-Wen; Chen, Zih-Han; Teng, Hsiao-Hsuan; Liu, Chuan-Hsi is a Engineering article available to read on EtoBox.
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- Author
- Lee, Chang-Chun; Cheng, Hsien-Chie; Hsu, Hung-Wen; Chen, Zih-Han; Teng, Hsiao-Hsuan; Liu, Chuan-Hsi
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2014
- Language
- EN
- Field
- Engineering (Physical Sciences)