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InGaAs/InP Single-Photon Avalanche Diodes (SPADs) exhibit low dark counts and moderate cooling requirements, making them suitable for near-infrared photon counting applications. The document discusses the performance limitations due to afterpulsing effects and presents experimental characterizations of these detectors, highlighting their dark count rates and photon timing resolution. Design considerations for optimizing SPAD performance, including electric field management and material quality, are also add

Author

Gohn

Language

EN