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Investigations of structural, optical, electrical and photocatalytic behavior of ZnO:N thin films for p-type substrate: Influence of annealing temperature by K. Saravanakumar; P. Sakthivel; R.K. Sankaranarayanan; K. Ravichandran is a Materials Science article available to read on EtoBox.

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This study used a simplified, automated spray pyrolysis setup with a perfume atomizer to prepare nitrogen (N) doped ZnO thin films. The deposited thin films were annealed at 300 oC to 500 oC under a nitrogen atmosphere. In the present work, detailed investigations are carried out on the effect of annealing on structural, optical, and surface morphological, photoluminescence, and electrical properties of p-type ZnO:N thin films. The effect of annealing temperature on the photocatalytic activity of N-doped ZnO thin films was studied, the degradation efficacy was and 91%. The XRD diffractograms depicted that all the prepared films have a wurtzite structure, high crystallinity, and C-axis orientation. The increased annealing temperature received a red shift in the band gap. A flake-like morphology was observed from SEM images. The p-type to n-type conductivity transformation is kept at the maximum applied annealing temperature of 500 oC. A resistivity received ∼ 21.7 Ω cm was obtained for 400 oC annealing temperature. Photocatalytic studies confirmed that higher degradation efficiency was exhibited for higher annealing temperatures. The present investigations reveal that the properties

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Author

K. Saravanakumar; P. Sakthivel; R.K. Sankaranarayanan; K. Ravichandran

Publisher

Elsevier BV

Published

2022

Language

EN

Field

Materials Science (Physical Sciences)