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What is 200V N-Channel MOSFET Specifications about?

This document provides information on 200V N-Channel MOSFETs using trench DMOS technology. The MOSFETs have a drain-source breakdown voltage of 200V, on-state resistance of 24mΩ at 10V gate-source voltage, and continuous drain current rating of 30A. They are well-suited for fast switching applications due to their improved switching performance and ability to withstand high energy pulses in avalanche and commutation modes. Electrical characteristics including on/off ratings, gate charge, and safe operating

Author

johnwayne314

Language

EN