Opening book details…
About this Engineering article
Impact of HfTaO Buffer Layer on Data Retention Characteristics of Ferroelectric-Gate FET for Nonvolatile Memory Applications by Minghua Tang; Xiaolei Xu; Zhi Ye; Sugiyama, Y.; Ishiwara, H. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Minghua Tang; Xiaolei Xu; Zhi Ye; Sugiyama, Y.; Ishiwara, H.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2011
- Field
- Engineering (Physical Sciences)
More by Minghua Tang; Xiaolei Xu; Zhi Ye; Sugiyama, Y.; Ishiwara, H.
Browse all works by Minghua Tang; Xiaolei Xu; Zhi Ye; Sugiyama, Y.; Ishiwara, H.