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About this Engineering article
A quasi-SOI power MOSFET for radio frequency applications formed by reversed silicon wafer direct bonding by Matsumoto, S.; Hiraoka, Y.; Sakai, T.; Yachi, T.; Ishiyama, T.; Kosugi, T.; Kamitsuna, H.; Muraguchi, M. is a Engineering article available to read on EtoBox.
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- Author
- Matsumoto, S.; Hiraoka, Y.; Sakai, T.; Yachi, T.; Ishiyama, T.; Kosugi, T.; Kamitsuna, H.; Muraguchi, M.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2001
- Field
- Engineering (Physical Sciences)