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Strain dependence and deformation potential of the E1 and E1+Δ1 transitions of ZnTe grown on a GaAs (001) substrate by J.H. Bahng; M.S. Jang; M. Lee; J.C. Choi; H.L. Park; K.J. Kim; C. Lee is a Physics and Astronomy article available to read on EtoBox.

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ZnTe epitaxial ®lms grown on GaAs (001) substrates with varying ®lm thicknesses were investigated by spectroscopic ellipsometry (SE). As the epilayer thickness decreases, the interband-transition structures near 3.6 and 4.2 eV due to E 1 and E 1 1 D 1 edges, respectively, shift gradually to higher energies and their energy splitting D 1 increases, indicating the increase in lattice-mismatch-induced strain with decreasing ®lm thickness. The exact energies of the E 1 and E 1 1 D 1 edges are obtained by a line-shape analysis of numerical second derivative spectra of the dielectric functions. From the strain dependences of the E 1 and E 1 1 D 1 energies, the deformation potentials (DP), D 1 1 and D 3 3 , at the L point of the Brillouin zone (BZ) are estimated.

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Author

J.H. Bahng; M.S. Jang; M. Lee; J.C. Choi; H.L. Park; K.J. Kim; C. Lee

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)

Published

2001

Language

EN

Field

Physics and Astronomy (Physical Sciences)