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GaN/Diamond Bonding for Power Devices by Luisi Liu is a document available to read on EtoBox.
This research article presents a novel method for bonding gallium nitride (GaN) to diamond using a room-temperature compression process, enhancing thermal management in vertical power devices. The integration is achieved through a Ti/Au intermetallic layer, resulting in high thermal boundary conductance and low compressive stress in the bonded areas. The study utilizes advanced imaging techniques to characterize the bond quality and highlights the importance of spatial sampling for understanding thermal tra
- Author
- Luisi Liu
- Language
- EN