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Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height by Inokuchi, T.; Yoda, H.; Kato, Y.; Shimizu, M.; Shirotori, S.; Shimomura, N.; Koi, K.; Kamiguchi, Y.; Sugiyama, H.; Oikawa, S.; Ikegami, K.; Ishikawa, M.; Altansargai, B.; Tiwari, A.; Ohsawa, Y.; Saito, Y.; Kurobe, A. is a Engineering article available to read on EtoBox.

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Author
Inokuchi, T.; Yoda, H.; Kato, Y.; Shimizu, M.; Shirotori, S.; Shimomura, N.; Koi, K.; Kamiguchi, Y.; Sugiyama, H.; Oikawa, S.; Ikegami, K.; Ishikawa, M.; Altansargai, B.; Tiwari, A.; Ohsawa, Y.; Saito, Y.; Kurobe, A.
Publisher
American Institute of Physics; AIP Publishing (ISSN 0003-6951)
Published
2017
Field
Engineering (Physical Sciences)

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