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This document discusses the development of a high-performance thin-film lithium niobate (TFLN) modulator on a silicon substrate, utilizing a periodic capacitively loaded traveling-wave electrode to achieve ultra-large bandwidth without compromising driving voltage. The proposed modulator demonstrates low optical loss of 0.2 dB and high electro-optic bandwidth with a roll-off of 1.4 dB at 67 GHz, enabling data rates up to 112 Gb/s with PAM-4 modulation. The integration of this modulator with silicon photonic
- Author
- andrei.muresian
- Language
- EN