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What is Thermoelectric Properties of Si Nanowires about?

This document summarizes predictions from ab initio calculations of the thermoelectric figure of merit (ZT) for silicon nanowires with diameters up to 3 nm. The calculations show that ZT depends significantly on the nanowire growth direction and surface structure. Only by reducing the ionic thermal conductivity by 2-3 orders of magnitude compared to bulk silicon can a ZT larger than 1 be achieved for 1-3 nm wires. ZT is also found to be higher for n-doped wires compared to p-doped wires of the same size and

Author

emediage

Language

EN