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Manipulation and Readout of Spin States of a Single-molecule Magnet by a Spin-polarized Current by Xue, Hai-Bin; Liang, Jiu-Qing; Liu, Wu-Ming is a scholarly article available to read on EtoBox.

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Single-molecule memory device based on a single-molecule magnet (SMM) is one of the ultimate goals of semiconductor nanofabrication technologies. Here, we study how to manipulate and readout the SMM's two spin-state of stored information that characterized by the maximum and minimum average value of the $Z$-component of the total spin of the SMM and the conduction-electron, which are recognized as the information bits "$1$" and "$0$". We demonstrate that the switching time depends on both the sequential tunneling gap $\varepsilon_{se}$ and the spin-selection-rule allowed transition-energy $\varepsilon_{trans}$, which can be tuned by the gate voltage. In particular, when the external bias voltage is turned off, in the cases of the unoccupied and doubly-occupied ground eigenstates, the time derivative of the transport current can be used to read out the SMM's two spin-state of stored information. Moreover, the tunneling strength of and the asymmetry of the SMM-electrode coupling have a strong influence on the switching time, but that have a slight influence on the readout time that being on the order of nanoseconds. Our results suggest a SMM-based memory device, and provide fundament

Author

Xue, Hai-Bin; Liang, Jiu-Qing; Liu, Wu-Ming

Published

2021

Language

EN