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About this Materials Science article
A study of dielectric breakdown mechanism through the statistical analysis of post-breakdown resistance of thin SiO2 films by Toriumi, A; Satake, H is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Toriumi, A; Satake, H
- Publisher
- Institute of Physics and National Institute of Materials Science; Informa UK (Taylor & Francis); Taylor & Francis; Informa UK Limited (ISSN 1468-6996)
- Published
- 2000
- Field
- Materials Science (Physical Sciences)