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This review article discusses the potential of III-V Tunnel Field Effect Transistors (TFETs) as alternatives to traditional MOSFETs for ultra low power digital and analog applications due to their unique properties. It examines factors affecting the performance of III-V TFETs, including gate dielectric thickness, temperature, and device geometry, while highlighting their scalability and advantages over silicon-based technologies. The paper also addresses limitations such as poor on-state current and ambipol

Author

Eswaran P

Language

EN