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About this Engineering article
Over 2 A Operation at 250 °C of GaN Metal–Oxide–Semiconductor Field Effect Transistors on Sapphire Substrates by Niiyama, Yuki; Kambayashi, Hiroshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Chow, Tat-sing Paul is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Niiyama, Yuki; Kambayashi, Hiroshi; Ootomo, Shinya; Nomura, Takehiko; Yoshida, Seikoh; Chow, Tat-sing Paul
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 2008
- Language
- EN
- Field
- Engineering (Physical Sciences)