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Pinch Effect in Semiconductors in the Case of an Injected Plasma — The Field‐Controlled Current Regime by I. I. Boiko is a Physics and Astronomy article available to read on EtoBox.

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## Abstract The pinch effect in semiconductors is considered for the case when excess current carriers are injected from contacts into a semiconductor. A crystal with dimensions long compared to the bipolar diffusion length, permits to use the field‐driven current approximation [1, 2]; in most of the volume of the solid the longitudinal field flows of carriers dominate over the longitudinal diffusion flows and the volume of the solid absorbs most of the applied voltage and hence determines the current‐voltage characteristic. The treatment is limited to the high injection level situation, when a local density of non‐equilibrium carriers significantly exceeds that of equilibrium electrons and holes. The carriers are supposed to be non‐degenerate. For crystals of plate and cylinder geometry the current‐voltage characteristics, the electric field, and the carrier density distribution are calculated. The calculations are performed for two aspects of space recombination kinetics — the monomolecular and the bimolecular recombination. It is shown that the bimolecular recombination reduces the current at pinch conditions.

Who reads Pinch Effect in Semiconductors in the Case of an Injected Plasma — The Field‐Controlled Current Regime?

Author

I. I. Boiko

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

1971

Language

DE

Field

Physics and Astronomy (Physical Sciences)