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About this scholarly article
2005 International Semiconductor Device Research Symposium - High Mobility Strained Ge MOSFETs with high-k gate dielectric on Si by Donnelly, J.P.; Kelly, D.Q.; Joshi, S.; Dey, S.; Shahrjerdi, D.; Wiedeman, I.; Ahmad, D.; Banerjee, S.K. is a scholarly article available to read on EtoBox.
- Author
- Donnelly, J.P.; Kelly, D.Q.; Joshi, S.; Dey, S.; Shahrjerdi, D.; Wiedeman, I.; Ahmad, D.; Banerjee, S.K.
- Publisher
- IEEE
- Published
- 2005
- Language
- EN