About this scholarly article

International Conferencre on Simulation of Semiconductor Processes and Devices - The physical phenomena responsible for excess noise in short-channel MOS devices by Navid, R.; Dutton, R.W. is a scholarly article available to read on EtoBox.

Author

Navid, R.; Dutton, R.W.

Publisher

Japan Soc. Appl. Phys

Published

2002