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The document discusses advancements in high-performance p-type transistors using two-dimensional (2D) semiconductors, particularly WSe₂, which shows promise for complementary metal-oxide-semiconductor (CMOS) technology. It highlights the performance gap between p-type and n-type transistors, outlines challenges in achieving high-performance 2D PMOS devices, and proposes potential solutions such as defect passivation and contact engineering. The document emphasizes the importance of material selection and th

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unveilers0

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EN