About this Engineering article
Improvement of SiO2/4H-SiC Interface Quality by Post-Oxidation Annealing in N2 at High-Temperatures by Chanthaphan, Atthawut; Cheng, Yen Hung; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji is a Engineering article available to read on EtoBox.
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- Author
- Chanthaphan, Atthawut; Cheng, Yen Hung; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji
- Publisher
- Trans Tech Publications, Ltd.; Trans Tech Publications Ltd. (ISSN 1662-9752)
- Published
- 2016
- Field
- Engineering (Physical Sciences)