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Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells by J.F. Lampin; X. Wallart; J.P. Gouy; F. Mollot is a Physics and Astronomy article available to read on EtoBox.

What is Light-hole resonant tunnelling through tensile-strained GaInAs quantum wells about?

We have experimentally investigated the light-and heavy-hole states in tensile-strained GaInAs quantum wells using photoluminescence and photocurrent spectroscopies. Under special conditions, the strain resulting from the lattice mismatch is large enough to reverse the order of the light-and heavy-hole levels (the first light-hole level becomes the ground state). We obtained an experimental light-to-heavy-hole splitting of 50 meV in agreement with calculations. To take advantage of this situation, we realized and characterized the first p-i-p resonant tunnelling diode on an InP substrate. Resonances are clearly visible in the conductance-voltage characteristics but the first resonance is not yet enhanced as expected in this structure. We discuss the reasons that prevent the observation of the first light-hole resonance.

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Author

J.F. Lampin; X. Wallart; J.P. Gouy; F. Mollot

Publisher

Elsevier Science; Elsevier ; Elsevier Inc.; Elsevier BV (ISSN 0749-6036)

Published

1998

Language

EN

Field

Physics and Astronomy (Physical Sciences)