About this Engineering article
Investigation of Ar ion implant gettering of gold in silicon by m.o.s. and Rutherford backscattering techniques: A. G. Nassibian and B. Golija. IEE Proc., 127, (I, 1) 29 (February 1980) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1980
- Field
- Engineering (Physical Sciences)