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About this scholarly article
2016 13th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS) - Comparison and analysis of short circuit capability of 1200V single-chip SiC MOSFET and Si IGBT by Sun, Jiahui; Xu, Hongyi; Wu, Xinke; Sheng, Kuang is a scholarly article available to read on EtoBox.
- Author
- Sun, Jiahui; Xu, Hongyi; Wu, Xinke; Sheng, Kuang
- Publisher
- IEEE
- Published
- 2016
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