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What is Electrical Properties of Graphene Oxide TFT about?

This study investigates the electrical characteristics of graphene oxide (GO) based thin film transistors (GO-TFTs) using polymer insulators like PMMA and PVP. The GO nanosheets were synthesized via a modified Hummers method and characterized through various spectroscopic techniques. The GO-TFTs exhibited p-type semiconducting behavior with a mobility of 0.105 cm²/V·s, a threshold voltage of -8.7 V, and an Ion/Ioff ratio of 10.

Author

andres0519pa

Language

EN