About this scholarly article

2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO 2 based ReRAM by Wiefels, S.; Bottger, U.; Menzel, S.; Wouters, D. J.; Waser, R. is a scholarly article available to read on EtoBox.

Author

Wiefels, S.; Bottger, U.; Menzel, S.; Wouters, D. J.; Waser, R.

Publisher

IEEE

Published

2020