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The Kinetics of Light‐induced Defect Creation in Hydrogenated Polymorphous Silicon – Stretched Exponential Relaxation by K. Morigaki; H. Hikita; K. Takeda; P. Roca i Cabarrocas is a Engineering article available to read on EtoBox.

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## Abstract The growing curve of light‐induced dangling bonds under illumination has been observed for various intensities of illumination in hydrogenated polymorphous silicon. It is fitted to a stretched exponential function with two parameters β and τ. The experimental results on the values of β and τ as functions of saturated dangling bond density N~ss~ are compared with those calculated on the basis of our model for light‐induced defect creation in a‐Si:H. This comparison as well as the experimental result on saturated dangling bond density as a function of generation rate of free carriers is consistent with our model (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Who reads The Kinetics of Light‐induced Defect Creation in Hydrogenated Polymorphous Silicon – Stretched Exponential Relaxation?

Author

K. Morigaki; H. Hikita; K. Takeda; P. Roca i Cabarrocas

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)