Opening book details…
Can I read State creation induced by gate bias stress in unhydrogenated polysilicon TFTs on EtoBox?
State creation induced by gate bias stress in unhydrogenated polysilicon TFTs by B. Tala-Ighil; A. Rahal; K. Mourgues; A. Toutah; L. Pichon; T. Mohammed-Brahim; F. Raoult; O. Bonnaud is a Engineering article available to read on EtoBox.
What is State creation induced by gate bias stress in unhydrogenated polysilicon TFTs about?
The stability under high gate bias of the recent high performance n-and p-type unhydrogenated polysilicon TFTs realised with low temperature solid-phase crystallization technology, is studied. The threshold shift DV T is positive for n-type and negative for p-type TFTs whatever the polarity of the stress gate bias. DV T shows a power-law time (t/t 0 ) b dependence for both polarities. The subthreshold slope increases and the transconductance decreases during these stresses. The overall density of the gap states, determined from the known ®eldeffect analysis, increases during these stresses. The disordered structure of polysilicon is involved to explain this state creation in unhydrogenated TFTs.
Who reads State creation induced by gate bias stress in unhydrogenated polysilicon TFTs?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- B. Tala-Ighil; A. Rahal; K. Mourgues; A. Toutah; L. Pichon; T. Mohammed-Brahim; F. Raoult; O. Bonnaud
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 1999
- Language
- EN
- Field
- Engineering (Physical Sciences)