About this document
MOCVD Process for GaN Growth by Rajeev Kumar is a document available to read on EtoBox.
This document discusses MOCVD (Metalorganic Chemical Vapor Deposition) technology and the growth of materials using this method. It describes the key components of an MOCVD system including the gas handling system, reactor, vacuum and exhaust. It also discusses the metalorganic source compounds used, gas phase and surface reactions during growth, characterization techniques for analyzing materials, and details the MOCVD growth process of GaN and related materials. Challenges in growing high quality GaN such
- Author
- Rajeev Kumar
- Language
- EN