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Investigation of beryllium implanted P-type GaN by Chang-Chin Yu; C.F Chu; J.Y Tsai; S.C Wang is a Materials Science article available to read on EtoBox.

What is Investigation of beryllium implanted P-type GaN about?

We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of 10 13 and 10 14 cm -2 at room temperature. Surface morphology and photoluminescence measurements are presented.

Who reads Investigation of beryllium implanted P-type GaN?

Author

Chang-Chin Yu; C.F Chu; J.Y Tsai; S.C Wang

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

2001

Language

EN

Field

Materials Science (Physical Sciences)