About this document
Ion Implantation in VLSI Technology by Abhinav Singh is a document available to read on EtoBox.
This document discusses ion implantation, which is a technique used to introduce dopants into semiconductors. Ion implantation works by ionizing dopant atoms, accelerating them, and directing them at a silicon substrate where they come to rest. The average depth and dopant dose can be controlled. Ion implantation causes damage to the crystal lattice that must be repaired through annealing to activate the dopants. Channeling effects can cause uncontrollable dopant profiles if ions travel along crystal axes w
- Author
- Abhinav Singh
- Language
- EN