Opening book details…
Can I read Drift region optimization in high-voltage GaN MOS-gated HEMTs on EtoBox?
Drift region optimization in high-voltage GaN MOS-gated HEMTs by Zhongda Li; T. P. Chow is a Engineering article available to read on EtoBox.
What is Drift region optimization in high-voltage GaN MOS-gated HEMTs about?
## Abstract The design of AlGaN/GaN heterojunction in high‐voltage lateral GaN MOS‐HEMT was studied and optimized. The effect of the heterojunction on the breakdown voltage of the device was studied using numerical simulations. The effect of the addition of a GaN cap layer on top of the AlGaN/GaN structure was evaluated, showing a higher breakdown voltage as well as a lower oxide field at the gate corner, due to the better Reduced Surface Field (RESURF) effect that originated from the balanced polarization charges. Further a 2‐zone RESURF design was achieved by etching part of the GaN cap in the drift region. The 2‐zone RESURF device showed 33% improvement in breakdown voltage from simulations compared with single zone RESURF devices. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Who reads Drift region optimization in high-voltage GaN MOS-gated HEMTs?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Zhongda Li; T. P. Chow
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)