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About this Engineering article
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si by Liu, W.; Zhu, J. J.; Jiang, D. S.; Yang, H.; Wang, J. F. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Liu, W.; Zhu, J. J.; Jiang, D. S.; Yang, H.; Wang, J. F.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2007
- Language
- EN
- Field
- Engineering (Physical Sciences)
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