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Transition Metal Dichalcogenide-Based Field-Effect Transistors for Analog/Mixed- Signal Applications by Brajesh Rawat; Vinaya M. M.; Roy Paily is a Engineering article available to read on EtoBox.

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Transition metal dichalcogenides (TMDs), such as MoS 2 , MoSe 2 , MoTe 2 , WS 2 , WSe 2 , etc., have been considered as the most promising candidates for energyefficient information processing at ultrascaled devices due to their decent energy gap of around 1-2 eV and singleatomic thickness. Even though there are many efforts to explore their performance for digital applications, their performance considerations for analog/mixed-signal applications are still unexplored. In this regard, we have assessed the analog/RF performance of TMD-based fieldeffect transistors (TMD-FETs) and investigated their benefits over graphene-FET and black phosphorous-FETs. The performance analysis is done by an in-house developed code, which involves the self-consistent solutions of 2-D Poisson's equation and nonequilibrium Green's function (NEGF) formalism. The results show that MoS 2 -FET can offer high intrinsic gain with the intrinsic cutoff frequency and maximum oscillation frequency in terahertz range. However, the significant degradation in high-frequency performance of MoS 2 -FET is observed in the presence of external resistances and parasitic capacitances. The cutoff frequency has found a few h

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Author

Brajesh Rawat; Vinaya M. M.; Roy Paily

Publisher

IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)

Published

2019

Language

EN

Field

Engineering (Physical Sciences)