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Electron detachment energies of Al4P− and Ga4P− by Edet F. Archibong; Martha Kandawa-Schulz; Eino N. Mvula is a Physics and Astronomy article available to read on EtoBox.

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Geometric and electronic structures of Al 4 P À , Al 4 P, Ga 4 P À and Ga 4 P are studied using B3LYP-DFT and CCSD(T) methods with the 6-311+G(2d) and 6-311+G(2df) one-particle basis sets. The anions have similar square pyramidal (C 4v ) gas phase equilibrium geometry while the neutral species possess the trapezium (C 2v ) planar geometry in accordance with the predictions of Boldyrev and Wang [A.I. Boldyrev, L.S. Wang, J. Phys. Chem. A 105 ( 2001) 10759]. Electron detachment processes from the ground electronic states of the anions are presented and an attempt is made to assign the features observed in the anion photoelectron spectra of Al 4 P À and Ga 4 P À .

Who reads Electron detachment energies of Al4P− and Ga4P−?

Author

Edet F. Archibong; Martha Kandawa-Schulz; Eino N. Mvula

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0009-2614)

Published

2005

Language

EN

Field

Physics and Astronomy (Physical Sciences)