About this scholarly article

International Technical Digest on Electron Devices - Base transport in near-ideal graded-base Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors from 150 K to 370 K by Prinz, E.J.; Sturm, J.C. is a scholarly article available to read on EtoBox.

Author

Prinz, E.J.; Sturm, J.C.

Publisher

IEEE

Published

1990

Language

EN