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What is SPICE Model for Floating-Gate MOS Synapses about?

This document presents an empirical simulation model for p-channel floating-gate MOS synapse transistors, which can be implemented in any SPICE circuit simulator. The model is based on simple oxide-current measurements and accurately simulates the IHEI and tunneling processes essential for synaptic operations. The authors demonstrate the model

Author

sharifahum

Language

EN