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This document presents findings from a photoluminescence study on boron-implanted silicon, revealing that the emission yield varies significantly with different laser excitation wavelengths. The study highlights the challenges in measuring absolute PL intensity due to internal reflections and the influence of defects and impurities. Enhanced band-edge emission was observed with 532 nm excitation, particularly after annealing at temperatures around 850 °C to 900 °C, indicating structural changes in the mater

Author

Heber Hernández Flores

Language

EN