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Microstructures produced during the epitaxial growth of InGaN alloys by G.B. Stringfellow is a Engineering article available to read on EtoBox.

What is Microstructures produced during the epitaxial growth of InGaN alloys about?

Effects due to phase separation in InGaN have been identified as having major effects on the performance of devices, in particular light-emitting diodes (LEDs) and injection lasers. However, the complexity of the various materials phenomena that can occur has led to a great deal of recent confusion. Much of this confusion can be eliminated by considering the experimentally measured materials properties in the context of the set of physical phenomena occurring during epitaxial growth, including coupling that exists between the various effects. Spinodal decomposition is expected to produce phase separation due to the miscibility gap in InGaN alloys. However, the actual occurrence of this phenomenon has been disputed due to the complexity of real systems. For example, the region of solid immiscibility for InGaN is strongly dependent on elastic strain. In addition, the strain, itself, affects properties such as the bandgap energy. Complicating the analysis of these phenomena is that the solid composition can be affected by elastic strain due to the well-known thermodynamic phenomenon of ''compositional pulling''. An additional factor must be considered if the experimentally observed ph

Who reads Microstructures produced during the epitaxial growth of InGaN alloys?

It is typically read by researchers, students, and practitioners in Engineering.

Author
G.B. Stringfellow
Publisher
Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
Published
2010
Language
EN
Field
Engineering (Physical Sciences)

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