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Implantation and annealing studies of Tm-implanted GaN by K Lorenz; E Alves; U Wahl; T Monteiro; S Dalmasso; R.W Martin; K.P O’Donnell; R Vianden is a Materials Science article available to read on EtoBox.

What is Implantation and annealing studies of Tm-implanted GaN about?

Thulium ions were implanted into metal organic chemical vapour deposition (MOCVD) grown GaN films with different fluences at implantation temperatures of 20, 400 and 500 • C. Subsequent annealing of the samples was performed in a rapid thermal annealing apparatus. The lattice damage introduced by the implantation and the effect of post-implant annealing were investigated with the Rutherford backscattering (RBS)/channelling technique. We observe that implantation at 500 • C considerably reduces the induced lattice damage and increases the amorphisation threshold. The lattice-site location of the implanted ions was determined by performing detailed channelling measurements for the 0 0 0 1 and 1 0 1 1 crystal directions. The results show that Tm ions mainly occupy substitutional Ga-sites directly after implantation and after annealing. The optical properties of the ion-implanted GaN films have been studied by room temperature cathodoluminescence (CL) measurements. Well-defined emission due to intra-4f shell transitions of the Tm 3+ ions are observed in the blue spectral range at 477 nm and in the near infra-red (IR) at 804 nm.

Who reads Implantation and annealing studies of Tm-implanted GaN?

Author

K Lorenz; E Alves; U Wahl; T Monteiro; S Dalmasso; R.W Martin; K.P O’Donnell; R Vianden

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)

Published

2003

Language

EN

Field

Materials Science (Physical Sciences)