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About this Engineering article
The Top Silicon Layer of SOI Formed by Oxygen Ion Implantation by Pinizzotto, R. F.; Vaandrager, B. L.; Matteson, S.; Lam, H. W.; Malhi, S. D. S.; Hamdi, A. H.; McDaniel, F. D. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Pinizzotto, R. F.; Vaandrager, B. L.; Matteson, S.; Lam, H. W.; Malhi, S. D. S.; Hamdi, A. H.; McDaniel, F. D.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 1983
- Language
- EN
- Field
- Engineering (Physical Sciences)