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Feasibility of re-oxidized nitrided oxide (RONO) as a charge-trapping medium for the non-volatile memory by Sang-Eun Lee; Joo-Yeon Kim; Ho-Myoung An; Kwang-Yell Seo; Byungcheul Kim is a Engineering article available to read on EtoBox.

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We report on feasibility of a re-oxidized nitrided oxide (RONO) as a charge-trapping medium for non-volatile memory. The RONO is in situ formed by initial oxidation in wet oxygen ambient followed by NO anneal, then re-oxidation in wet O 2 ambient, and has an ''oxide/nitrogen-rich layer/oxide'' structure. The nitrogen existing in the oxide bulk constitutes SiON bonding, and the nitrogen existing near the new formed Si-SiO 2 interface constitutes Si 2 NO bonding. The SiON bonding due to the non-bonding site of nitrogen buried in the oxide is expected as a main bonding status important to the memory properties. MOS transistors with the RONO show the maximum memory window of 2.5 V and the memory retention of about three-years.

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Author

Sang-Eun Lee; Joo-Yeon Kim; Ho-Myoung An; Kwang-Yell Seo; Byungcheul Kim

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

2007

Language

EN

Field

Engineering (Physical Sciences)