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Can I read Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy on EtoBox?
Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy by Yi-Keng Fu; Yu-Hsuan Lu; Ren-Hao Jiang; Bo-Chun Chen; Yen-Hsiang Fang; Rong Xuan; Yan-Kuin Su; Chia-Feng Lin; Jebb-Fang Chen is a Engineering article available to read on EtoBox.
What is Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy about?
Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al 0.089 In 0.035 Ga 0.876 N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.
Who reads Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy?
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Yi-Keng Fu; Yu-Hsuan Lu; Ren-Hao Jiang; Bo-Chun Chen; Yen-Hsiang Fang; Rong Xuan; Yan-Kuin Su; Chia-Feng Lin; Jebb-Fang Chen
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)