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UWB Low Noise Amplifier Design Using pHEMT by Rahul Yadav is a document available to read on EtoBox.

What is UWB Low Noise Amplifier Design Using pHEMT about?

1) The document describes the design of an ultra wideband low noise amplifier using a pseudomorphic high electron mobility transistor. 2) Impedance matching is achieved using a stepped impedance stub to provide a flat gain across the bandwidth of 3.1-10.6 GHz. 3) Simulation and measurement results show the amplifier achieves a gain of over 9 dB across the bandwidth with input and output return losses below -10 dB and a noise figure less than 2 dB.

Author

Rahul Yadav

Language

EN