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The document investigates the effect of gate-insulator thickness on co-axial cylindrical carbon nanotube field effect transistors (CNTFETs), highlighting their advantages over traditional Si-MOSFETs, such as higher drive current and lower power consumption. Simulations reveal that increasing gate-insulator thickness significantly decreases drain current due to increased resistance, while increasing the carbon nanotube diameter enhances current carrying capacity. The study emphasizes the importance of optimi
- Author
- suchismita0101
- Language
- EN