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Strained Ge/Si(001) interface in the presence of Bi and Sb surfactants by P De Padova; R Larciprete; C Quaresima; A Reginelli; P Perfetti is a Physics and Astronomy article available to read on EtoBox.

What is Strained Ge/Si(001) interface in the presence of Bi and Sb surfactants about?

The adsorption of Ge on the Bi / Si(001)235 surface (Bi saturation coverage of 0.7 ML) and on Sb / Si(001)231 (Sb saturation coverage of 0.9 ML), was investigated by core level photoemission spectroscopy. For the Bi / Si(001)235 interface, at submonolayer Ge coverage, the presence of a bulk component largely dominating the Ge 3d core level, demonstrates that the favorite adsorption sites are the Bi-terminated terraces, where the Ge-Bi site exchange takes place. At larger Ge coverage, in addition to the previous process, the occurrence of a pure Ge epitaxy on the bare fraction of the substrate is indicated by the presence of the 231 surface components in the Ge 3d core level. In the case of Sb / Si(001)231 interface, the Ge 3d shows a complete lack of surface components, which indicates the absence of dimerized Ge atoms at the top layer, and demonstrates that the Ge-Sb site exchange process has taken place on the whole Si(001) surface.

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Author

P De Padova; R Larciprete; C Quaresima; A Reginelli; P Perfetti

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0368-2048)

Published

1999

Language

EN

Field

Physics and Astronomy (Physical Sciences)