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Crystal orientation-dependent oxidation of epitaxial TiN films with tunable plasmonics by Zhang, Ruyi; Ma, Qian-Ying; Liu, Haigang; Sun, Tian-Yu; Bi, Jiachang; Song, Yang; Peng, Shaoqin; Liang, Lingyan; Gao, Junhua; Cao, Hongtao; Huang, Liang-Feng; Cao, Yanwei is a scholarly article available to read on EtoBox.

What is Crystal orientation-dependent oxidation of epitaxial TiN films with tunable plasmonics about?

Titanium nitride (TiN) is a paradigm of refractory transition metal nitrides with great potential in vast applications. Generally, the plasmonic performance of TiN can be tuned by oxidation, which was thought to be only temperature-, oxygen partial pressure-, and time-dependent. Regarding the role of crystallographic orientation in the oxidation and resultant optical properties of TiN films, little is known thus far. Here we reveal that both the oxidation resistance behavior and the plasmonic performance of epitaxial TiN films follow the order of (001) < (110) < (111). The effects of crystallographic orientation on the lattice constants, optical properties, and oxidation levels of epitaxial TiN films have been systematically studied by combined high-resolution X-ray diffraction, spectroscopic ellipsometry, X-ray absorption spectroscopy, and X-ray photoemission spectroscopy. To further understand the role of crystallographic orientation in the initial oxidation process of TiN films, density-functional-theory calculations are carried out, indicating the energy cost of oxidation is (001) < (110) < (111), consistent with the experiments. The superior endurance of the (111) orientation

Author

Zhang, Ruyi; Ma, Qian-Ying; Liu, Haigang; Sun, Tian-Yu; Bi, Jiachang; Song, Yang; Peng, Shaoqin; Liang, Lingyan; Gao, Junhua; Cao, Hongtao; Huang, Liang-Feng; Cao, Yanwei

Published

2021

Language

EN