About this Engineering article
Fast Switching -Ga2O3 Power MOSFET with a Trench-Gate Structure by Dong, Hang; Long, Shibing; Sun, Haiding; Zhao, Xiaolong; He, Qiming; Qin, Yuan; Jian, Guangzhong; Zhou, Xuanze; Yu, Yangtong; Guo, Wei; Xiong, Wenhao; Hao, Weibing; Zhang, Ying; Xue, Huiwen; Xiang, Xueqiang; Yu, Zhaoan; Lv, Hangbing; Liu, Qi; Liu, Ming is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Dong, Hang; Long, Shibing; Sun, Haiding; Zhao, Xiaolong; He, Qiming; Qin, Yuan; Jian, Guangzhong; Zhou, Xuanze; Yu, Yangtong; Guo, Wei; Xiong, Wenhao; Hao, Weibing; Zhang, Ying; Xue, Huiwen; Xiang, Xueqiang; Yu, Zhaoan; Lv, Hangbing; Liu, Qi; Liu, Ming
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0741-3106)
- Published
- 2019
- Language
- EN
- Field
- Engineering (Physical Sciences)