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About this Engineering article
Determination of the trapped charge distribution in scaled silicon nitride MONOS nonvolatile memory devices by tunneling spectroscopy : Anirban Roy and Marvin H. White. Solid-St. Electron. 34(10), 1083 (1991) is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0026-2714)
- Published
- 1992
- Field
- Engineering (Physical Sciences)