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About this Engineering article
Improved high-temperature device transport properties and off-state characteristics of AlGaN/GaN power devices with atomic layer deposition (ALD) HfAlO high- k dielectric by Lee, B; Choi, Y H; Kirkpatrick, C; Huang, A Q; Misra, V is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Lee, B; Choi, Y H; Kirkpatrick, C; Huang, A Q; Misra, V
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)
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